A. Ahktari-Zavareh, W.-J. Li, K. L. Kavanagh, A. Trionfi, J. C. Jones, J. L. Reno, A. A. Talin, and J. W. P. Hsu, "Au/Ag and Au/Pd Molecular Contacts to GaAs," J. Vac. Sci. Technol. B 26, 1597-1601 (2008)
J. W. P. Hsu, Z. R. Tian, N. C. Simmons, C. M. Matzke, J. A. Voigt, and J. Liu, "Bottom-up Assembly of ZnO Nanorods on Surfaces using Organic Templates," Abstracts of Papers of the American Chemical Society 229, 70-PMSE part 2, U1113-U1114 (2005)
T.-W. Lee, O. Mitrofanov, C. A. White, and J. W. P. Hsu, "Fabrication of Polymer Photonic Crystals by Two-photon Nanolithography," Proceedings of MRS 2003 Spring Meeting 776, Q8.32.1-Q8.32.6 (2003)
J. F. Federici, O. Mitrofanov, M. Lee, J. W. P. Hsu, I. Brener, R. Harel, J. D. Wynn, L. N. Pfeiffer, and K. W. West, "Terahertz Near-field Imaging," Physics in Medicine and Biology 47, 3727-3734 (2002)
R. L. Willett, J. W. P. Hsu, K. W. West, and L. N. Pfeiffer, "Experimental Examination of Anisotropic Transport in the High Landau Levels of the Correlated 2D Electron System," Institue of Physics Conference Series 174, 223-226 (2003)
O. Mitrofanov, M. Lee, J. W. P. Hsu, I. Brener, R. Harel, J. Federici, J. D. Wynn, L. N. Pfeiffer, and K. W. West, "Collection Mode Near-field Imaging with 0.5 THz Pulses," IEEE J. Selected Topics in Quantum Electronics - Ultrafast Phenomena 7, 600-607 (2001)
J. W. P. Hsu, D. V. Lang, M. J. Manfra, S. Richter, S. N. G. Chu, A. M. Sergent, R. N. Kleiman, L. N. Pfeiffer, and R. J. Molnar, "Scanning Probe Studies of Defect Dominated Electronic Transport in GaN," in III-Nitride based Semiconductor Electronics and Optical Devices and Thirty-fourth State-of-the-art Program on Compound Semiconductors (SOTAPOCS XXXIV), ed. by F. Ren, D. N. Buckley, S. N. G. Chu, and S. J. Pearton, Electrochemcial Society Proceedings of the International Symposia 2001-1, 37-50 (2001)
J. W. P. Hsu, E. B. McDaniel and S. C. McClain, "Development of Polarization Modulation Near-field Scanning Optical Microscope and Its Application to Mapping Defect-induced Birefringence in SrTiO3 Bicrystals," Microscopy & Microanalysis 4, Supplement 2, 314-315 (1998)
M. H. Gray and J. W. P. Hsu, "Spatially Resolved Photoresponse of Relaxed GeSi Films Studied at Varying Temperatures and with Linearly Polarized Light," Proceedings of 1997 International Semiconductor Device Research Symposium 1, 323-326 (1997)
J. W. P. Hsu, M. H. Gray, and Q. Xu, "Nanometer Scale Studies of Defects in Semiconductor Films by Near-field Optical Beam Induced Current," Proceedings of Defect Recognition and Image VII, Inst. Phys. Conf. Ser. 160, 27-36 (1997)
J. W. P. Hsu, E. B. McDaniel, R. A. Rao, and C. B. Eom, "Microstructural Defects in SrTiO3 Bicrystals and Their Influence on YBa2Cu3O7 Film Growth," Mater. Res. Soc. Symp. Proc. 474, 91-98 (1997)
J. W. P. Hsu, M. H. Gray, and Q. Xu, "Scanning Probe Microscopy Studies of Electrically Active Defects in Lattice Mismatched Films," Scanning Microscopy 11, (1997)
J. W. P. Hsu, E. A. Fitzgerald, Y. H. Xie, and P. J. Silverman, "Near-field Photoelectronic Studies of Nanometer-scale Defects in Relaxed GeSi Films," Proceedings of 1995 International Semiconductor Device Research Symposium 1, 35-37 (1995)
J. Z. Sun, D. J. Webb, M. Naito, K. Char, M. R. Hahn, J. W. P. Hsu, A. D. Kent, D. B. Mitzi, B. Oh, M. R. Beasley, T. H. Geballe, R. H. Hammond, and A. Kapitulnik, "Superconductivity and Magnetism in the High Tc Superconductor YBaCuO," Phys. Rev. Lett. 58, 1574-1576 (1987)
J. W. P. Hsu and J. Liu, "Directed Spatial Organization of Zinc Oxide Nanostructures," US Patent #7,491,423 (February 17, 2009)
J. W. P. Hsu, Y.-L. Loo, and J. A. Rogers, "Forming Electrical Contact to a Molecular Layer," US Patent #7,229,847 (June 12, 2007)
J. W. P. Hsu and M. J. Manfra, "Apparatus with Improved Layers of Group III-Nitride Semiconductor," US Patent #7,038,300 (May 2, 2006)
J. W. P. Hsu, M. J. Manfra, and N. G. Weimann, "Method for Growing Layers of Group III-Nitride Semiconductor Having Electrically Passivated Threading Defects," US Patent #6,699,760 (March 2, 2004)
J. W. P. Hsu, Mark Lee, and B. S. Deaver, "Nanometer Distance Regulation Using Electro-mechanical Power Dissipation," US Patent #5,886,532 (March 23, 1999)