IMG not available  Flexible and Large Area Nanoelectronics

Home     Facilities    Faculty & Staff     Students     Publications     Presentations     News     Contact

IMG Not availableIMG not Available




Tool Reservations: Click Here




Clean Room Facility

IMG not available       IMG Not Available

Thin Film Deposition – Chemical Vapor Deposition, Sputter, Evaporation

IMG Not Available       IMG Not Available


Thermal Processing – Rapid Thermal, Atmospheric furnaces

IMG Not Available     



Lithography - UV contact printing, Mask laser writer, pattern, etch

IMG Not Available        IMG Not Available



Characterization - Electrical, physical

IMG Not Available



Nano Characterization Facility

Atomic resolution TEM/STEM (JEM-ARM200F)

High resolution Analytical TEM/STEM with remote microscopy (JEM-2100F)

Dual column FIB/FEG SEM (FEI) with nano-manipulator, EDS, Cryo-transfer

E-beam litho (Zeiss Supra 40) with nano-manipulator, EBSD, EDS

Cryo, STM-TEM, AFM-TEM nano-factory, Heating, 3D tomography

Comprehensive Sample Preparation Lab.

Rigaku XRD:  Ultima-III thin film system & Rapid Spider system

Scanning probe microscope (Veeco MultiMode V)

XPS, AES



Our Facilities


Hall system and CCR
IMG Not available
The Lake Shore 8400 Series can be used with both DC and AC field Hall measurement methodologies to facilitate the broadest range of research applications. The system includes fully integrated instrumentation, a magnet and power supply, plus software that dramatically helps you increase your research productivity and provides results that you can trust. The system is capable of DC field measurements and has a resistance range from 0.5 mΩ to 200GΩ. Measure Hall voltage, Hall coefficient, Hall mobility, and resistivity. You can also determine carrier density and carrier mobility versus temperature. For temperature-dependent applications, the 8400 Series options enable you to measure samples from 10 K to 350 K with a closed-cycle refrigerator or take dedicated 77 K measurements with an optional single-point LN2 body.

Solar Cell Characterization
IMG not available
For solar cell characterization we use a solar light source from Newport  (67005 Arc Lamp Housing), with its power source model 69907. These 67005 Arc Lamp Housing  was designed for 50 to 500 Watt Hg, Xe and Hg(Xe) DC arc lamps. It uses a F/1 Single Element Fused Silica condenser for a 1.3 inch (33 mm) diameter collimated beam at the 1.5 Inch Series output flange. For electrical measurement we use a Keithley 2400 Source Measure Unit (SMU). This instrument is designed specifically for test applications that demand tightly coupled sourcing and measurement and can measure up to 200V, 1A and 20W.The power source characteristics include low noise, precision, and readback. These instruments can act as a voltage source, a current source, a voltage meter, a current meter, and an ohmmeter.

Electrical Characterization
IMG not available
For electrical characterization of materials, we use Keithley 4200-SCS, this tool is a modular, fully integrated parameter analyzer that performs electrical characterization of materials, semiconductor devices and processes. From basic I-V and C-V measurement sweeps to advanced ultra-fast pulsed I-V, waveform capture, and transient I-V measurements, the 4200-SCS provides the researcher or engineer with critical parameters needed for design, development or production. For C-V measurement, HP 4284A precision LCR meter is used. The wide 20 Hz to 1 MHz test frequency range and superior test-signal performance allow the HP 4284A to test components to the most commonly-used test standards. These tools are complemented with a Cascade Microtech probe station, with a Temptronics heated chuck which range from -25°C to 250°C to perform measurements at different samples temperatures.

Omnijet 100 Inkjet Printer, manufactured by Unijet (S. Korea)
IMG not available
Inkjet printing is considered one of the most popular methods for solution-based deposition and noncontact patterning of organic materials. The popularity of this method lies in its cost-effectiveness and large-areas compatibility compared with other deposition techniques that require high temperature and vacuum system. Inkjet printing minimizes wastage of materials when fabricating devices; in most cases, the volume of material that is needed is in the range of a few picoliters (pL).
It can be used to print materials on flexible, glass, Si or any other substrate using various types of special inks, ranging from metal nanoparticles to organic compound solutions. With the option of using two types of cartridges, namely FujiFilm Dimatix and Samsung cartridges. Can be loaded up to 4 different cartridges at a time with different inks to print multi-structured complex circuits and devices. The printer also has the capacity of heating the substrate when needed.
Features:
•    Four Refillable and cleanable cartridges (6 ml) in one head module.
•    FujiFilm Dimatix and Samsung cartridge can be used.
•    Six automatic Motion stages with ± 7 ㎛ Stage accuracy.
•    Auto Alignment with automatic head rotation.
•    Single Droplet Measurement.
•    XY Servo Motor Stage, ± 5 ㎛ Repeatability.
•    300 x 210 mm effective stroke.
•    Automatic Head & Work Holder Rotation.
•    Heating substrate (20-150 °C).



Soldering Station
IMG not available
Our soldering station is composed of two main systems, the first one is a Soldering/Desoldering Station LF-8800, a versatile tool able to transfer temperatures from 300 to 896°F to its three components (Solder Iron, Tweezers and Hot-Air Pencil), and the second one is a SMD Rework Station LF-852D able to transferring heat from 212 to 896 °F through an air flow (1.5L-40L/Min.) for mounting or dismounting electrical components.
Both with high accuracy for those kind of simple/complex works that need high precision like Surface-mount device (SMD) in which the components are mounted or placed directly onto the surface of printed circuit boards (PCBs). Being the Soldering Station the last step (assembly) of our manufacturing process of electronic devices, complemented by design / simulation / fabrication at laboratory-level of electronic components (transistors, Diodes and Capacitors) and design / simulation / fabrication of electronic boards.

ATC Orion-8
IMG not available
The ATC Orion-8 sputter deposition system, by AJA International, has the capability to co-sputter conductive and insulating materials on substrates up to 4" in diameter. In addition to Ar sputtering, O2 is also available for use in reactive-ion sputtering. The tool is equipped with 2 RF (300W) and 1 DC (750W) magnetron sources. The substrate is capable of heating to 850C while under rotation as well as exposure to reactive gas and RF bias (50W). A cooled chevron prevents sputtered material from entering into the turbopump. Software for control is also available for automated film stack deposition.

Closed Space Sublimation
IMG not available
The OTF-1200X-RTP-II is a two heating zone rapid thermal processing vertical tube furnace with 11" I.D. processing quartz tube and vacuum flange. It is designed for PVD or CSS (Close Spaced Sublimation) film coating up to 3" diameter or 2"x2"square. The furnace is heated by two group halogen heaters (Top and Bottom) separately with max. 20ºC/s heating rate. Two 30 segment precision temperature controllers are built in with +/-1ºC accuracy. RS485 port and control software are included to allow for operation of furnace and monitoring temperature profile via PC.

Gloveboxes
IMG not available
Our Gloveboxes provide a clean, low-humidity, Oxygen free environment for laboratory, cleanroom, electronic assembly and other critical processing operations in such industries as semiconductor  manufacturing. These Gloveboxes set up for Positive pressure operations and when utilized with automatic purge control units, they can maintain a preset relative humidity or oxygen level using an inert gas such as Nitrogen.

Hoods
IMG not available
Our hoods protect the user from harmful or toxic fumes or vapors generated from a broad range of applications.

Pulsed Laser Deposition (PLD) system
IMG not available
Pulsed Laser deposition (PLD) is a versatile thin film deposition technique. A pulsed laser rapidly evaporates a target material forming a thin film that retains target composition. The uniqueness of PLD is that the energy source (pulsed laser) is outside the deposition chamber. This facilitates a large dynamic range of operating pressures (10-7 Torr to 100 Torr) during material synthesis. By controlling the deposition pressure and temperature, a variety of nanostructures and nanoparticles can be synthetized with unique functionalities. In addition, PLD is “digital” technique and provides process control (Å/pulse) at the nanoscale.

Our lab count with two chambers, and we used them for different purposes, which are described as follows:


a)  General purposes, where it is possible to deposit a wide variety of chalcogenides, even transition metal di-chalcogenides
b)  Metal oxides such as ZnO, In2O3, Ga2O3, IGZO, HfO2, ITO, AZO, Al2O3, TiO2, among others.


The system is available with a 248nm KrF excimer laser, where the frequency of the shoots can be changed from 0.1 Hz to 25 Hz. The Lenses system allow us to change the energy density from 0.1 J/cm2 to 2 J/cm2. It is possible to deposit up to 3” substrate from RT to 850 °C. The maximum number of targets allows at the same time is 6 of 1” of diameter and up to 3 with 2” of diameter. Hence, Pulsed Laser deposition with continuous composition spread is possible, this allows for a very rapid successive deposition of each constituent at a rate of much less than a monolayer per cycle, resulting in an approach that us fundamentally equivalent to a co-deposition method. The fact that this method does not depend on a post-deposition anneal to promote interdiffusion or crystallization makes it applicable to studies where growth temperature is critical parameter, or to situations where high temperatures anneals are incompatible with either the deposited material or substrate.



Pulsed Electron Deposition


IMG not available

Our system is quite versatile, because Pulsed electron deposition is possible. PED is a process in which a pulsed (100ns) high power electron beam (approximately 1000 Å, 15 keV) penetrates approximately 1 μm into the target resulting in a rapid evaporation of target material, and its transformation in plasma state.  The non-equilibrium extraction of the target material (ablation) facilitates stoichiometric composition of the plasma. Under optimum conditions, the target stoichiometry is thus preserved in the deposited film. All solid state materials-metals, semiconductors and insulators, can be deposited as thin films with PED. Unlike PLD where the ablation process is critically dependent on the optical absorption coefficient of the target material, in PED, the ablation depends only on the range of electrons in the target.




DXR Raman microscope

IMG Not Available

Lateral resolution (xy) up to 1 µm and depth resolution up to 2 µm, a spectral range from below 100 to 3600 cm-1 with a spectral resolution up to 2 cm-1 one excitation lasers (532nm)