Tunnel field-effect transistors

Picture of a TFET
Topological insulator field-effect transistors

Picture of a TI FET
Two-dimensional materials

Picture of a scattering event with a flexural phonon
Selected list of publications (Complete list of publications)

W. G. Vandenberghe and M. V. Fischetti.
Imperfect two-dimensional topological insulator field-effect transistors
Nature Communications, 7:14184, 2017.

C. Zhang, S. KC, Y. Nie, C. Liang, W. G. Vandenberghe, R. C. Longo, Y. Zheng, F. Kong, S. Hong, R.M. Wallace, and K. Cho
Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and W x Mo1–x Te2 Alloy
ACS nano, 8:7370, 2016.

W.G. Vandenberghe and Massimo V. Fischetti.
Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons.
Journal of Applied Physics 116.17 (2014): 173707.

W. G. Vandenberghe, A. S. Verhulst, B. Sorée, W. Magnus, G. Groeseneken, Q. Smets, M. Heyns and M. V. Fischetti.
Figure of merit for and identification of sub-60 mV/decade devices
Applied Physics Letters, 102:013510, 2013.

W. G. Vandenberghe, A. S. Verhulst, K.-H. Kao, K. De Meyer, B. Sorée, W. Magnus, and G. Groeseneken.
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors
Applied Physics Letters, 100:193509, 2012.

W. G. Vandenberghe, B. Sorée, W. Magnus, G. Groeseneken, and M. V. Fischetti.
Impact of field-induced quantum confinement in tunneling field-effect devices.
Applied Physics Letters, 98(14):143503, 2011.

W. Vandenberghe, A. Verhulst, G. Groeseneken, B. Sorée, and W. Magnus.
Analytical model for a tunnel field-effect transistor
In Proceedings of the 14th IEEE Mediterranean Electrotechnical Conference - MELECON, pages 923-928, Ajaccio (France), May 2008.

A. Verhulst, W. Vandenberghe, K. Maex, and G. Groeseneken.
Tunnel field-effect transistor without gate-drain overlap.
Applied Physics Letters, 91(5):053102, 2007.